CN EN
Home
About Us
Newpros
IGBT Micro Trench Discrete for PV/Eenergy Storage/EV Charger Application
IGBT Micro Trench Discrete for PV/Eenergy Storage/EV Charger Application Back
PDF

Introduction 1、TO-247-3L/TO-247-4L and other packages;
2、650V 50A, Si and SiC hybrid packaging products for different applications;
3、It is mainly used for PV/EV charger/Eenergy Storage applications, and adopts advanced trench design technology to meet the requirements of high efficiency of power devices in power conversion system;
4、Other market mainstream products can be completely pin to pin replaced by our related series products;
5、Use environmentally friendly materials and meet RoHS standards;
Features 1、1.6um micro-trench design, excellent product performance, with low Vce(sat) and fast switching characteristics;
2、S series product with medium speed for 20-30Khz application demand and H series product with high speed for 30-40Khz;
3、Tjmax=175℃,high reliability;
SPECIFICATION

DGZ50N65CTH2A DGZ50N65CTS2A

Related new products

SGT N60V MOSFET for Clean Energy Field

DFN1608 Package Small Signal Schottky Diode for Mobile Phone PCB

IGBT Discrete For PTC of Auto Industry

C2&E3 IGBT Modules for Variable-frequency Drive

MOSFET for High Power DC-DC

SOD-323FL Schottky

IGBT 50A/75A 1200V Discrete for Industrial Control

IGBT 50A 1200V Discrete for Industrial Control

N30V Trench MOSFET for PD VBUS

IGBT low loss series